InAsSb-based detectors on GaSb for near-room -temperature operation in the mid-wave infrared

Craig, Adam and Marshall, Andrew and Letka, Veronica and Carmichael, Mark and Golding, Terry (2021) InAsSb-based detectors on GaSb for near-room -temperature operation in the mid-wave infrared. Applied Physics Letters, 118 (25): 251103. ISSN 0003-6951

Text (APL21-AR-02434)
APL21_AR_02434.pdf - Accepted Version
Available under License Creative Commons Attribution.
Download (1MB)

Abstract

III-Sb barrier detectors suitable for the mid-wave infrared were grown on GaSb by molecular beam epitaxy. Using both bulk-InAsSb and an InAsSb-InAs strained layer superlattice, operation close to room temperature was demonstrated with cut-off wavelengths of 4.82 μm and 5.79 μm, respectively, with zero-bias operation possible for the bulk-InAsSb detector. X-ray diffraction, temperature dependent dark current and spectral quantum efficiency were measured, and an analysis based on calculated specific detectivity carried out. 1/f noise effects are considered. Results indicate these optimized devices may be suitable as alternatives to InSb, or even HgCdTe, for many applications, especially where available power is limited.