Items where Author is "Yakovlev, Y. P."

Journal Article

Averkiev, N. S. and Sherstnev, V. V. and Monakhov, A. M. and Grebenshikova, E. A. and Kislyakova, A. Y. and Yakovlev, Y. P. and Krier, A. and Wright, D. A. (2007) Physical working principles of semiconductor disk lasers. . Low Temperature Physics, 33 (2-3). pp. 283-290. ISSN 1090-6517

Sherstnev, V. V. and Monakhov, A. M. and Astakhova, A. P. and Kislyakova, A. Y. and Yakovlev, Y. P. and Averkiev, N. S. and Krier, A. and Hill, G. (2005) Semiconductor WGM lasers for the mid-IR spectral range. Semiconductors, 39 (9). pp. 1087-1092. ISSN 1063-7826

Moiseev, K. D. and Krier, A. and Yakovlev, Y. P. (2004) Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0-89 lattice matched to InAs. . Journal of Electronic Materials, 33 (8). pp. 867-872. ISSN 0361-5235

Moiseev, K. D. and Krier, A. and Mikhailova, M. P. and Yakovlev, Y. P. (2002) Interface-induced electroluminescence in the type IIP-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 single heterojunction. Journal of Physics D: Applied Physics, 35 (7). pp. 631-636. ISSN 0022-3727

Moiseev, K. D. and Krier, A. and Yakovlev, Y. P. (2001) Interface photoluminescence in type II broken-gap P-Ga0.84In0.16As0.22Sb0.78/p-InAs single heterostructures. . Journal of Applied Physics, 90 (8). pp. 3988-3992. ISSN 1089-7550