Items where Author is "Tsai, G."

Cripps, S. A. and Hosea, T. J. C. and Krier, A. and Smirnov, V. and Batty, P. J. and Zhuang, Q. D. and Lin, H. H. and Liu, P. W. and Tsai, G. (2008) Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance. Thin Solid Films, 516 (22). pp. 8049-8058. ISSN 0040-6090

Zhuang, Q. and Godenir, A. and Krier, A. and Tsai, G. and Lin, H. H. (2008) Molecular beam epitaxial growth of InAsN : Sb for midinfrared Optoelectronics. Applied Physics Letters, 93 (12). p. 121903. ISSN 1077-3118

Cripps, S. A. and Hosea, T. J. C. and Krier, A. and Smirnov, V. and Batty, P. J. and Zhuang, Q. D. and Lin, H. H. and Liu, P. W. and Tsai, G. (2007) Midinfrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb indicating negligible bowing for the spin orbit splitting energy. . Applied Physics Letters, 92 (17). p. 172106. ISSN 1077-3118

Liu, P. W. and Tsai, G. and Lin, H. H. and Krier, A. and Zhuang, Q. D. and Stone, M, M. (2006) Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy. . Applied Physics Letters, 89 (20). p. 201115. ISSN 1077-3118

Krier, A. and Stone, M. and Zhuang, Q. D. and Liu, P. W. and Tsai, G. and Lin, H. H. (2006) Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes. . Applied Physics Letters, 89 (9). 091110. ISSN 1077-3118