Items where Author is "Moiseev, K. D."

Moiseev, K. D. and Krier, A. and Yakovlev, Y. P. (2004) Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0-89 lattice matched to InAs. . Journal of Electronic Materials, 33 (8). pp. 867-872. ISSN 0361-5235

Moiseev, K. D. and Krier, A. and Mikhailova, M. P. and Yakovlev, Y. P. (2002) Interface-induced electroluminescence in the type IIP-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 single heterojunction. Journal of Physics D: Applied Physics, 35 (7). pp. 631-636. ISSN 0022-3727

Moiseev, K. D. and Krier, A. and Yakovlev, Y. P. (2001) Interface photoluminescence in type II broken-gap P-Ga0.84In0.16As0.22Sb0.78/p-InAs single heterostructures. . Journal of Applied Physics, 90 (8). pp. 3988-3992. ISSN 1089-7550