Items where Author is "Lane, Dominic"

Kumar, Abhishek and Dar, Musaibh Farooq and Hodgson, Peter and Lane, Dominic and Carrington, Peter and Delli, Evangelia and Beanland, Richard and Mehrotra, Shruti and Hayne, Manus and Dasgupta, Avirup (2025) Physics, modeling, and benchmarking of ULTRARAM : A compoundsemiconductor-based memory device. Journal of Applied Physics, 138 (9): 095702. ISSN 0021-8979

Trevisan, Aurelia and Hodgson, Peter and Lane, Dominic and Hayne, Manus and Koenraad, P.M. (2023) Defect formation in InGaAs/AlSb/InAs memory devices. Journal of Vacuum Science and Technology B, 41 (4): 044001. ISSN 1071-1023

Hodgson, Peter and Lane, Dominic and Carrington, Peter and Delli, Evangelia and Beanland, Richard and Hayne, Manus (2022) ULTRARAM : A Low-Energy, High-Endurance, Compound-Semiconductor Memory on Silicon. Advanced Electronic Materials, 8 (4): 2101103. ISSN 2199-160X

Lane, Dominic and Hayne, Manus (2021) Simulations of resonant tunnelling through InAs/AlSb heterostructures for ULTRARAM™ memory. Journal of Physics D: Applied Physics, 54 (35): 335104. ISSN 0022-3727

Lane, Dominic and Hodgson, Peter and Potter, Richard and Beanland, Richard and Hayne, Manus (2021) ULTRARAM : toward the development of a III-V semiconductor, non-volatile, random-access memory. IEEE Transactions on Electron Devices, 68 (5). pp. 2271-2274. ISSN 0018-9383

Lane, Dominic and Hodgson, Peter and Potter, Richard and Hayne, Manus (2021) Demonstration of a Fast, Low-Voltage, III-V Semiconductor, Non-Volatile Memory. In: 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) :. IEEE, pp. 1-3. ISBN 9781728181776

Lane, Dominic and Hayne, Manus and Marshall, Andrew (2021) ULTRARAM™ : Design, Modelling, Fabrication and Testing of Ultra-low-power III-V Memory Devices and Arrays. PhD thesis, Lancaster University.

Lane, Dominic (2020) IMPROVEMENTS RELATING TO ELECTRONIC MEMORY DEVICES. WO/2020/240186.

Lane, Dominic and Hayne, Manus (2020) Simulations of ultra-low power non-volatile cells for random access memory. IEEE Transactions on Electron Devices, 67 (2). pp. 474-480. ISSN 0018-9383

Keen, James and Lane, Dominic and Kesaria, Manoj and Marshall, Andrew Robert Julian and Krier, Anthony (2018) InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs. Journal of Physics D: Applied Physics, 51 (7): 075103. ISSN 0022-3727