Items where Author is "Hodgson, Peter"

Journal Article

Trevisan, Aurelia and Hodgson, Peter and Lane, Dominic and Hayne, Manus and Koenraad, P.M. (2023) Defect formation in InGaAs/AlSb/InAs memory devices. Journal of Vacuum Science and Technology B, 41 (4): 044001. ISSN 1071-1023

Hodgson, Peter and Lane, Dominic and Carrington, Peter and Delli, Evangelia and Beanland, Richard and Hayne, Manus (2022) ULTRARAM : A Low-Energy, High-Endurance, Compound-Semiconductor Memory on Silicon. Advanced Electronic Materials, 8 (4): 2101103. ISSN 2199-160X

Lane, Dominic and Hodgson, Peter and Potter, Richard and Beanland, Richard and Hayne, Manus (2021) ULTRARAM : toward the development of a III-V semiconductor, non-volatile, random-access memory. IEEE Transactions on Electron Devices, 68 (5). pp. 2271-2274. ISSN 0018-9383

Delli, Evangelia and Hodgson, Peter and Bentley, Matthew and Repiso Menendez, Eva and Craig, Adam and Lu, Qi and Beanland, Richard and Marshall, Andrew and Krier, Anthony and Carrington, Peter (2020) Mid-infrared Type-II InAs/InAsSb Quantum Wells Integrated on Silicon. Applied Physics Letters, 117 (13): 131103. ISSN 0003-6951

Wilson, Tom and Hodgson, Peter and Robson, Alexander and Jackson, Charles and Grew, Benjamin and Hayne, Manus (2020) A detailed comparison of measured and simulated optical properties of a short-period GaAs/AlxGa1-xAs distributed Bragg reflector. Semiconductor Science and Technology, 35 (5): 055003. ISSN 0268-1242

Hodgson, Peter and Hayne, Manus and Robson, Alex and Zhuang, Qiandong and Danos, Eleftherios (2016) GaSb quantum rings in GaAs/AlxGa1−xAs quantum wells. Journal of Applied Physics, 119 (4): 044305. ISSN 0021-8979

Hodgson, Peter and Hayne, Manus and Ahmad Kamarudin, Mazliana and Zhuang, Qiandong and Birindelli, Simone and Capizzi, Mario (2014) Hydrogenation of GaSb/GaAs quantum rings. Applied Physics Letters, 105: 081907. ISSN 0003-6951

Hodgson, Peter and Young, Robert and Ahmad Kamarudin, Mazliana and Zhuang, Qiandong and Hayne, Manus (2013) Hole migration and optically induced charge depletion in GaSb/GaAs wetting layers and quantum rings. Physical review B, 88 (15): 155322. ISSN 1550-235X

Hayne, M. and Young, R. J. and Smakman, E. P. and Nowozin, T. and Hodgson, Peter and Garleff, J. K. and Rambabu, P. and Koenraad, P. M. and Marent, A. and Bonato, L. and Schliwa, A. and Bimberg, D. (2013) The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory. Journal of Physics D: Applied Physics, 46 (26): 264001. ISSN 0022-3727

Contribution in Book/Report/Proceedings

Jones, Sam and Hodgson, Peter and Hayne, Manus (2024) GaSb quantum-rings for vertical-cavity surface-emitting lasers emitting at telecommunications and mobile sensing wavelengths. In: Proceedings Volume 12904, Vertical-Cavity Surface-Emitting Lasers XXVIII; 129040J (2024) :. SPIE.

Lane, Dominic and Hodgson, Peter and Potter, Richard and Hayne, Manus (2021) Demonstration of a Fast, Low-Voltage, III-V Semiconductor, Non-Volatile Memory. In: 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) :. IEEE, pp. 1-3. ISBN 9781728181776

Carrington, Peter and Delli, Evangelia and Letka, Veronica and Bentley, Matthew and Hodgson, Peter and Repiso Menendez, Eva and Hayton, Jonathan and Craig, Adam and Lu, Qi and Beanland, Richard and Krier, Anthony and Marshall, Andrew (2020) Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon. In: Proceedings Volume 11503, Infrared Sensors, Devices, and Applications X :. SPIE--The International Society for Optical Engineering.

Contribution to Conference

Woodhead, Christopher and Hodgson, Peter and Young, Matthew and Roberts, Jonny and Noori, Yasir and Hayne, Manus and Young, Robert (2015) Efficient optical coupling to semiconductor quantum dots, using tunable microfluidically-formed solid immersion lenses. In: UK Semiconductor Conference 2015, 2015-07-01 - 2015-07-02, SHU.