Items where Author is "David, John P. R."

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Number of items: 12.

Journal Article

Jin, Xiao and Zhou, Wenguang and Zhao, Yang and Tian, Qingyu and Yi, Xin and Tao, Xiaofeng and Craig, Adam and Modak, Mrudul and Marshall, Andrew and Xu, Yingqiang and Wang, Guowei and David, John P. R. and Buller, Gerald S. (2026) A Study of the Avalanche Multiplication and Excess Noise in Al x In 1– x As γ Sb 1- γ Avalanche Photodiodes Lattice-Matched to GaSb. ACS Photonics, 13 (5). pp. 1275-1283. ISSN 2330-4022

Jin, Xiao and Zhao, Shouwei and Craig, Adam P. and Tian, Qingyu and Gilder, Lindsay and Yi, Xin and Carmichael, M. and Golding, T. and Tan, Chee Hing and Marshall, Andrew R. J. and David, John P. R. (2024) High-performance room temperature 2.75 µm cutoff In<sub>0.22</sub>Ga<sub>0.78</sub>As<sub>0.19</sub>Sb<sub>0.81</sub>/Al<sub>0.9</sub>Ga<sub>0.1</sub>As<sub>0.08</sub>Sb<sub>0.92</sub> avalanche photodiode. Optica, 11 (12). pp. 1632-1638. ISSN 2334-2536

Green, James E. and Loh, Wei Sun and Marshall, Andrew R. J. and Ng, Beng Koon and Tozer, Richard C. and David, John P. R. and Soloviev, Stanislav I. and Sandvik, Peter M. (2012) Impact Ionization Coefficients in 4H-SiC by Ultralow Excess Noise Measurement. IEEE Transactions on Electron Devices, 59 (4). pp. 1030-1036. ISSN 0018-9383

Nunna, Kalyan Chakravarthy and Tan, Siew Li and Reyner, Charles J. and Marshall, Andrew Robert Julian and Liang, Baolai and Jallipalli, Anitha and David, John P. R. and Huffaker, Diana L. (2012) Short-Wave Infrared GaInAsSb Photodiodes Grown on GaAs Substrate by Interfacial Misfit Array Technique. IEEE Photonics Technology Letters, 24 (3). pp. 218-220. ISSN 1041-1135

Ker, Pin Jern and Marshall, Andrew R. J. and David, John P. R. and Tan, Chee Hing (2012) Low noise high responsivity InAs electron avalanche photodiodes for infrared sensing. Physica Status Solidi C, 9 (2). pp. 310-313. ISSN 1610-1634

Marshall, Andrew R. J. and Ker, Pin Jern and Krysa, Andrey and David, John P. R. and Tan, Chee Hing (2011) High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit. Optics Express, 19 (23). pp. 23341-23349. ISSN 1094-4087

Ker, Pin Jern and Marshall, Andrew R. J. and Krysa, Andrey B. and David, John P. R. and Tan, Chee Hing (2011) Temperature Dependence of Leakage Current in InAs Avalanche Photodiodes. IEEE Journal of Quantum Electronics, 47 (8). pp. 1123-1128. ISSN 0018-9197

Marshall, Andrew Robert Julian and Vines, Peter and Ker, Pin Jern and David, John P. R. and Tan, Chee Hing (2011) Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K. IEEE Journal of Quantum Electronics, 47 (6). pp. 858-864. ISSN 0018-9197

Marshall, Andrew R. J. and David, John P. R. and Tan, Chee Hing (2010) Impact Ionization in InAs Electron Avalanche Photodiodes. IEEE Transactions on Electron Devices, 57 (10). pp. 2631-2638. ISSN 0018-9383

Marshall, Andrew R. J. and Tan, Chee Hing and Steer, Mathew J. and David, John P. R. (2009) Extremely Low Excess Noise in InAs Electron Avalanche Photodiodes. IEEE Photonics Technology Letters, 21 (13). pp. 866-868. ISSN 1041-1135

Contribution in Book/Report/Proceedings

Zhao, Yang and Jin, Xiao and Zhou, Wenguang and Yi, Xin and Tian, Qingyu and Tao, Xiaofeng and Craig, Adam and Fleming, Fiona and Modak, Mrudul and Marshall, Andrew and Xu, Yingqiang and Wang, Guowei and Buller, Gerald S. and David, John P. R. (2025) AlInAsSb on GaSb Avalanche Photodiodes for eSWIR Detection. In: 2025 IEEE Photonics Conference (IPC) :. IEEE, pp. 1-2.

Marshall, Andrew R. J. and Tan, Chee Hing and David, John P. R. and Ng, Jo Shien and Hopkinson, Mark (2007) Fabrication of InAs Photodiodes with reduced surface leakage current - art. no. 67400H. In: Optical Materials in Defence Systems Technology IV :. SPIE-INT SOC OPTICAL ENGINEERING, Florence. ISBN 978-0-8194-6898-7

This list was generated on Thu Apr 2 07:34:44 2026 UTC.