Nunna, Kalyan Chakravarthy and Tan, Siew Li and Reyner, Charles J. and Marshall, Andrew Robert Julian and Liang, Baolai and Jallipalli, Anitha and David, John P. R. and Huffaker, Diana L. (2012) Short-Wave Infrared GaInAsSb Photodiodes Grown on GaAs Substrate by Interfacial Misfit Array Technique. IEEE Photonics Technology Letters, 24 (3). pp. 218-220. ISSN 1041-1135
Full text not available from this repository.Abstract
We report GaInAsSb-based p-i-n photodiodes operating in the 2-2.4-mu m wavelength range grown on GaAs (100) substrates using the interfacial misfit (IMF) array technique. A zero-bias dynamic-resistance-area product of 260 Omega cm(2) and a room temperature peak responsivity of 0.8 A/W (at 2 mu m) with an estimated maximum detectivity (D*) of similar to 3.8x10(10) cm Hz(1/2) W-1 is obtained in the photodiodes at -0.2 V. These preliminary results of the IMF-based GaInAsSb detectors are comparable to similar detectors grown on native GaSb substrates demonstrating the potential of the IMF array growth mode to realize high-quality Sb-based infrared detectors on GaAs substrates.