Items where Author is "Bentley, Matthew"

Journal Article

Marko, Igor and Duffy, Dominic Andrew and Bentley, Matthew and Marshall, Andrew R. J. and Rihani, Samir and Berry, Graham and Robertson, Michael and Rawsthorne, John and Carrington, Peter J and Sweeney, Stephen (2025) Molecular Beam Epitaxy Grown GaAs-Based Type-II “W” -Lasers for O-Band Applications. Journal of Physics D: Applied Physics, 58 (18): 185103. ISSN 0022-3727

Cao, Peng and Bentley, Matthew and You, Minghui and Wei, Jiaqi and Peng, Hongling and Wang, Tiancai and song, chunxu and Zhuang, Qiandong and Zheng, Wanhua (2024) pBn type short-wavelength infrared photodetector with an ultralow dark current and extended wavelength based on a strained InGaAs/GaAsSb superlattice. Optics Letters, 49 (23). pp. 6769-6772. ISSN 0146-9592

Altayar, Abdullah and Al-Saymari, Furat and Repiso Menendez, Eva and Hanks, Laura and Craig, Adam and Bentley, Matthew and Delli, Evangelia and Carrington, Peter and Krier, Anthony and Marshall, Andrew (2022) Electroluminescence characterization of mid-infrared InAsSb/AlInAs multi-quantum well light emitting diodes heteroepitaxially integrated on GaAs and Silicon wafers. Journal of Crystal Growth, 586: 126627. ISSN 0022-0248

Delli, Evangelia and Hodgson, Peter and Bentley, Matthew and Repiso Menendez, Eva and Craig, Adam and Lu, Qi and Beanland, Richard and Marshall, Andrew and Krier, Anthony and Carrington, Peter (2020) Mid-infrared Type-II InAs/InAsSb Quantum Wells Integrated on Silicon. Applied Physics Letters, 117 (13): 131103. ISSN 0003-6951

Hodgson, Peter David and Bentley, Matthew and Delli, Evangelia and Beanland, R and Wagener, Magnus C. and Botha, Johannes Reinhardt and Carrington, Peter James (2018) Optical and structural properties of InGaSb/GaAs quantum dots grown by molecular beam epitaxy. Semiconductor Science and Technology, 33 (12): 125021. ISSN 0268-1242

Contribution in Book/Report/Proceedings

Carrington, Peter and Delli, Evangelia and Letka, Veronica and Bentley, Matthew and Hodgson, Peter and Repiso Menendez, Eva and Hayton, Jonathan and Craig, Adam and Lu, Qi and Beanland, Richard and Krier, Anthony and Marshall, Andrew (2020) Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon. In: Proceedings Volume 11503, Infrared Sensors, Devices, and Applications X :. SPIE--The International Society for Optical Engineering.

Thesis

Bentley, Matthew and Carrington, Peter and Krier, Anthony (2021) 1.55μm Efficient Temperature Insensitive GaSb-based Lasers for Telecoms Applications. PhD thesis, Lancaster University.