Silicon-based single quantum dot emission in the telecoms C‑band

Orchard, Jonathan and Woodhead, Christopher and Wu, Jiang and Tang, Mingchu and Beanland, R and Noori, Yasir and Liu, Huiyun and Mowbray, David and Young, Robert James (2017) Silicon-based single quantum dot emission in the telecoms C‑band. ACS Photonics, 4 (7). pp. 1740-1746. ISSN 2330-4022

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Abstract

We report the observation of single quantum dot (QD) emission in the telecoms C-band (1530−1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the emission is achieved by capping InAs QDs with a thin GaAsSb layer. Sharp lines, representing emission from single QDs, are observed out to wavelengths as long as 1540 nm. Comparison is made to the optical properties of a nominally identical active region structure grown on a GaAs substrate. Single QD emission from a Si-based system at 1500 nm has the potential for single photon sources compatible with current optical fibers and reduced complexity of integration with drive electronics.

Item Type:
Journal Article
Journal or Publication Title:
ACS Photonics
Additional Information:
This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Photonics, copyright © American Chemical Society after peer review and technical editing by the publisher.
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/2200/2208
Subjects:
ID Code:
86874
Deposited By:
Deposited On:
28 Jun 2017 10:30
Refereed?:
Yes
Published?:
Published
Last Modified:
05 Dec 2020 04:12