Purches, W. E. and Rossi, A. and Zhao, R. and Kafanov, Sergey and Duty, T. L. and Dzurak, A. S. and Rogge, S. and Tettamanzi, G. C. (2015) A planar Al-Si Schottky barrier metal-oxide-semiconductor field effect transistor operated at cryogenic temperatures. Applied Physics Letters, 107 (6): 063503. ISSN 0003-6951
Full text not available from this repository.Abstract
Schottky Barrier-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and channel, and no spacers are required. At cryogenic temperatures, such devices function as p-MOS Tunnel FETs, as determined by the Schottky barrier at the Al-Si interface, and as a further advantage, fabrication processes are compatible with both CMOS and superconducting logic technology.