Measurement of the shot noise in a single-electron transistor

Kafanov, Sergey and Delsing, P. (2009) Measurement of the shot noise in a single-electron transistor. Physical review B, 80 (15). ISSN 1098-0121

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Abstract

We have systematically measured the shot noise in a single-electron transistor (SET) as a function of bias and gate voltages. By embedding a SET in a resonance circuit we have been able to measure its shot noise at the resonance frequency 464 MHz, where the 1/f noise is negligible. We can extract the Fano factor which varies between 0.5 and 1 depending on the amount of Coulomb blockade in the SET, in very good agreement with the theory.

Item Type:
Journal Article
Journal or Publication Title:
Physical review B
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/2500/2504
Subjects:
ID Code:
84891
Deposited By:
Deposited On:
27 Feb 2017 13:36
Refereed?:
Yes
Published?:
Published
Last Modified:
01 Jan 2020 10:14