Fabrication and characterization of chromium based single-electron transistors with evaporated chromium oxide barrier tunnel junctions

Pashkin, Yuri and Pekola, Jukka P. (1999) Fabrication and characterization of chromium based single-electron transistors with evaporated chromium oxide barrier tunnel junctions. Journal of Vacuum Science and Technology B, 17 (4). ISSN 1071-1023

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Abstract

We fabricated chromium based single-electron transistors comprising small-area Cr/CrOx/CrCr/CrOx/Cr tunnel junctions with an evaporated chromium oxide barrier. The transistors are fabricated using e-beam lithography with a bilayer resist and two-angle shadow evaporation. We describe the fabrication process and discuss the device characteristics.

Item Type: Journal Article
Journal or Publication Title: Journal of Vacuum Science and Technology B
Uncontrolled Keywords: /dk/atira/pure/subjectarea/asjc/3100/3104
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 84752
Deposited By: ep_importer_pure
Deposited On: 20 Feb 2017 09:20
Refereed?: Yes
Published?: Published
Last Modified: 01 Jan 2020 10:13
URI: https://eprints.lancs.ac.uk/id/eprint/84752

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