Fabrication and characterization of chromium based single-electron transistors with evaporated chromium oxide barrier tunnel junctions

Pashkin, Yuri and Pekola, Jukka P. (1999) Fabrication and characterization of chromium based single-electron transistors with evaporated chromium oxide barrier tunnel junctions. Journal of Vacuum Science and Technology B, 17 (4). ISSN 1071-1023

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Abstract

We fabricated chromium based single-electron transistors comprising small-area Cr/CrOx/CrCr/CrOx/Cr tunnel junctions with an evaporated chromium oxide barrier. The transistors are fabricated using e-beam lithography with a bilayer resist and two-angle shadow evaporation. We describe the fabrication process and discuss the device characteristics.

Item Type:
Journal Article
Journal or Publication Title:
Journal of Vacuum Science and Technology B
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3104
Subjects:
ID Code:
84752
Deposited By:
Deposited On:
20 Feb 2017 09:20
Refereed?:
Yes
Published?:
Published
Last Modified:
01 Jan 2020 10:13