Peculiarities of the hydrogenated In(AsN) alloy

Birindelli, Simone and Kesaria, Manoj and Giubertoni, D and Pettinari, G and Velichko, A.V. and Zhuang, Qiandong and Krier, Anthony and Patane, A. and Polimeni, A. and Capizzi, Mario (2015) Peculiarities of the hydrogenated In(AsN) alloy. Semiconductor Science and Technology, 30. p. 105030. ISSN 0268-1242

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Abstract

The electronic properties of In(AsN) before and after post-growth sample irradiation with increasing doses of atomic hydrogen have been investigated by photoluminescence. The electron density increases in In(AsN) but not in N-free InAs, until a Fermi stabilization energy is established. A hydrogen ε+/− transition level just below the conduction band minimum accounts for the dependence of donor formation on N, in agreement with a recent theoretical report highlighting the peculiarity of InAs among III–V compounds. Raman scattering measurements indicate the formation of N–H complexes that are stable under thermal annealing up to ∼500 K. Finally, hydrogen does not passivate the electronic activity of N, thus leaving the band gap energy of In(AsN) unchanged, once more in stark contrast to what has been reported in other dilute nitride alloys.

Item Type:
Journal Article
Journal or Publication Title:
Semiconductor Science and Technology
Additional Information:
This is an author-created, un-copyedited version of an article accepted for publication/published in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi:10.1088/0268-1242/30/10/105030
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3104
Subjects:
ID Code:
75641
Deposited By:
Deposited On:
16 Sep 2015 10:12
Refereed?:
Yes
Published?:
Published
Last Modified:
19 Sep 2020 03:31