Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb

Craig, Adam and Jain, M. and Wicks, G. and Golding, T. and Hossain, K. and McEwan, K. and Howle, C. and Percy, B. and Marshall, Andrew (2015) Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb. Applied Physics Letters, 106 (20). ISSN 0003-6951

[img]
Preview
PDF (1.4921468)
1.4921468.pdf - Published Version

Download (827kB)

Abstract

Short-wave infrared barriode detectors were grown by molecular beam epitaxy. An absorption layer composition of In0.28Ga0.72As0.25Sb0.75 allowed for lattice matching to GaSb and cut-off wavelengths of 2.9 μm at 250 K and 3.0 μm at room temperature. Arrhenius plots of the dark current density showed diffusion limited dark currents approaching those expected for optimized HgCdTe-based detectors. Specific detectivity figures of around 7×1010 Jones and 1×1010 Jones were calculated, for 240 K and room temperature, respectively. Significantly, these devices could support focal plane arrays working at higher operating temperatures.

Item Type:
Journal Article
Journal or Publication Title:
Applied Physics Letters
Additional Information:
Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 106 (20), 2015 and may be found at http://scitation.aip.org/content/aip/journal/apl/106/20/10.1063/1.4921468
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3101
Subjects:
ID Code:
74774
Deposited By:
Deposited On:
30 Jul 2015 08:14
Refereed?:
Yes
Published?:
Published
Last Modified:
12 Jul 2020 05:10