Craig, Adam and Jain, M. and Wicks, G. and Golding, T. and Hossain, K. and McEwan, K. and Howle, C. and Percy, B. and Marshall, Andrew (2015) Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb. Applied Physics Letters, 106 (20): 201103. ISSN 0003-6951
Abstract
Short-wave infrared barriode detectors were grown by molecular beam epitaxy. An absorption layer composition of In0.28Ga0.72As0.25Sb0.75 allowed for lattice matching to GaSb and cut-off wavelengths of 2.9 μm at 250 K and 3.0 μm at room temperature. Arrhenius plots of the dark current density showed diffusion limited dark currents approaching those expected for optimized HgCdTe-based detectors. Specific detectivity figures of around 7×1010 Jones and 1×1010 Jones were calculated, for 240 K and room temperature, respectively. Significantly, these devices could support focal plane arrays working at higher operating temperatures.