Wheatley, Robert and Kesaria, Manoj and Mwast, L.J and Kirch, J.D. and Kuech, T.F. and Marshall, Andrew and Zhuang, Qiandong and Krier, Anthony (2015) Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP. Applied Physics Letters, 106: 232105. ISSN 0003-6951
Final_version_before_acceptance.pdf - Accepted Version
Available under License Creative Commons Attribution.
Download (1MB)
Abstract
Extended wavelength photoluminescence emission within the technologically important 2–5 micrometer spectral range has been demonstrated from InAs1xNx and In1yGayAs1xNx type I quantum wells grown onto InP. Samples containing N 1% and 2% exhibited 4K photoluminescence emission at 2.0 and 2.7 lm, respectively. The emission wavelength was extended out to 2.9 lm (3.3 lm at 300 K) using a metamorphic buffer layer to accommodate the lattice mismatch. The quantum wells were grown by molecular beam epitaxy and found to be of a high structural perfection as evidenced in the high resolution x-ray diffraction measurements. The photoluminescence was more intense from the quantum wells grown on the metamorphic buffer layer and persisted up to room temperature. The mid-infrared emission spectra were analysed, and the observed transitions were found to be in good agreement with the calculated emission energies.