Carrier statistics model for a bilayer graphine nanoribbon in the nondegenerate regime

Sadeghi, H. and Ahmadi, M. T. and Webb, J. F. and Mousavi, S. M. and Ismail, R. and Ismail, I. (2011) Carrier statistics model for a bilayer graphine nanoribbon in the nondegenerate regime. AIP Conference Proceedings, 1337 (184). pp. 184-187. ISSN 0094-243X

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Abstract

This paper focuses on the electronic transport properties of bilayer Graphene nanoribbons (BGNRs). The electronic transport of two dimensional AB stacked BGNRs with widths less than 10 nm is investigated. Due to the small width, the BGNR can be assumed to operate as a one dimensional device. A mathematical model of carrier concentration in BGNRs in the nondegenerate regime is presented. The model shows that in this regime the carrier statistics of BGNRs can be expressed by an exponential function of the normalized Fermi energy eta, which is particularly useful in the lower carrier concentration regions.

Item Type:
Journal Article
Journal or Publication Title:
AIP Conference Proceedings
Subjects:
?? graphene nanoribbonbilayercarrier statisticsdegenerate limitfield effect transistorelectronic-propertiesgraphite ??
ID Code:
72819
Deposited By:
Deposited On:
02 Feb 2015 12:05
Refereed?:
Yes
Published?:
Published
Last Modified:
15 Jul 2024 15:02