Sub 10 ps carrier response times in electroabsorption modulators using quantum well offsetting

Daunt, Chris L. M. and Cleary, Ciaran S. and Manning, Robert J. and Thomas, Kevin and Young, Robert J. and Pelucchi, Emanuele and Corbett, Brian and Peters, Frank H. (2012) Sub 10 ps carrier response times in electroabsorption modulators using quantum well offsetting. IEEE Journal of Quantum Electronics, 48 (11). pp. 1467-1475. ISSN 0018-9197

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Official URL: https://doi.org/10.1109/JQE.2012.2210862

Abstract

Sub 10 ps photocarrier response time in an electroabsoption modulator using a custom epitaxy structure is demonstrated. This design used quantum well offsetting, carbon doping, and valence band discontinuity minimization, to achieve a 3.5 ps response time, when biased at -4.5 V. The quantum well offsetting also allows bandwidth optimization for a specific extinction ratio.

Item Type:

Journal Article

Journal or Publication Title:

IEEE Journal of Quantum Electronics

Uncontrolled Keywords:

/dk/atira/pure/subjectarea/asjc/3100/3104

Subjects:

?? DESIGNRECOVERYCARRIER TRANSIT TIMEBIPOLAR-TRANSISTOR STRUCTURESEPITAXY OPTIMIZATIONCIRCUITSINPZNLASERSELECTRO-ABSORPTION MODULATORQUANTUM CONFINED STARK EFFECTSATURATIONINTEGRATIONATOMIC AND MOLECULAR PHYSICS, AND OPTICSELECTRICAL AND ELECTRONIC ENGINEERI ??

Departments:

Faculty of Science and Technology > Physics

ID Code:

64736

Deposited By:

ep_importer_pure

Deposited On:

24 May 2013 08:26

Refereed?:

Yes

Published?:

Published

Last Modified:

19 Sep 2023 01:05

URI:

https://eprints.lancs.ac.uk/id/eprint/64736