Sub 10 ps carrier response times in electroabsorption modulators using quantum well offsetting

Daunt, Chris L. M. and Cleary, Ciaran S. and Manning, Robert J. and Thomas, Kevin and Young, Robert J. and Pelucchi, Emanuele and Corbett, Brian and Peters, Frank H. (2012) Sub 10 ps carrier response times in electroabsorption modulators using quantum well offsetting. IEEE Journal of Quantum Electronics, 48 (11). pp. 1467-1475. ISSN 0018-9197

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Abstract

Sub 10 ps photocarrier response time in an electroabsoption modulator using a custom epitaxy structure is demonstrated. This design used quantum well offsetting, carbon doping, and valence band discontinuity minimization, to achieve a 3.5 ps response time, when biased at -4.5 V. The quantum well offsetting also allows bandwidth optimization for a specific extinction ratio.

Item Type:
Journal Article
Journal or Publication Title:
IEEE Journal of Quantum Electronics
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3107
Subjects:
?? designrecoverycarrier transit timebipolar-transistor structuresepitaxy optimizationcircuitsinpznlaserselectro-absorption modulatorquantum confined stark effectsaturationintegrationatomic and molecular physics, and opticselectrical and electronic engineeri ??
ID Code:
64736
Deposited By:
Deposited On:
24 May 2013 08:26
Refereed?:
Yes
Published?:
Published
Last Modified:
15 Jul 2024 13:57