Estimating the spin diffusion length of semiconducting Indium Tin Oxide using Co/Indium Tin Oxide/Co spin valve junctions

Hakimi, A. M. H. R. and Banerjee, N. and Aziz, A. and Robinson, J. W. A. and Blamire, M. G. (2010) Estimating the spin diffusion length of semiconducting Indium Tin Oxide using Co/Indium Tin Oxide/Co spin valve junctions. Applied Physics Letters, 96 (10). ISSN 0003-6951

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Abstract

We have measured the transport behavior of Co/Indium Tin Oxide (ITO)/Co current-perpendicular-to-plane submicron spin-valve devices with ITO spacer thickness up to 20 nm, fabricated directly using a three-dimensional focused-ion beam etching technique. Using a simplified Valet-Fert model, we have determined a spin asymmetry ratio for Co of 0.55 and spin diffusion length of 6 +/- 1 nm in semiconducting ITO at room temperature. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3339882]

Item Type: Journal Article
Journal or Publication Title: Applied Physics Letters
Uncontrolled Keywords: /dk/atira/pure/subjectarea/asjc/3100/3101
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 63535
Deposited By: ep_importer_pure
Deposited On: 19 Apr 2013 10:17
Refereed?: Yes
Published?: Published
Last Modified: 01 Jan 2020 08:23
URI: https://eprints.lancs.ac.uk/id/eprint/63535

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