Hakimi, A. M. H. R. and Banerjee, N. and Aziz, A. and Robinson, J. W. A. and Blamire, M. G. (2010) Estimating the spin diffusion length of semiconducting Indium Tin Oxide using Co/Indium Tin Oxide/Co spin valve junctions. Applied Physics Letters, 96 (10): 102514. ISSN 0003-6951
Full text not available from this repository.Abstract
We have measured the transport behavior of Co/Indium Tin Oxide (ITO)/Co current-perpendicular-to-plane submicron spin-valve devices with ITO spacer thickness up to 20 nm, fabricated directly using a three-dimensional focused-ion beam etching technique. Using a simplified Valet-Fert model, we have determined a spin asymmetry ratio for Co of 0.55 and spin diffusion length of 6 +/- 1 nm in semiconducting ITO at room temperature. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3339882]