Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy

Das, S. K. and Das, T. D. and Dhar, S. and de la Mare, M. and Krier, A. (2012) Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy. Infrared Physics and Technology, 55 (1). pp. 156-160. ISSN 1350-4495

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Abstract

We report the first observation of photoluminescence (PL) from the dilute bismide alloy GaSbBi. Epitaxial layers are grown by liquid phase epitaxy technique onto GaSb (1 00) substrates and PL is obtained in the near infrared spectral range (lambda similar to 1.6 mu m). Incorporation of 0.2, 0.3 and 0.4 at% Bi to the layer results in a decrease of band gap energy up to 40 meV as well as an increase of luminescence from the sample. Structural analysis confirms the successful incorporation of Bi consistent with an increase in lattice parameter. Raman spectroscopy measurements indicate vibrational modes due to GaBi as well as to free Bi atoms residing at interstitial spaces. (C) 2011 Elsevier B.V. All rights reserved.

Item Type:
Journal Article
Journal or Publication Title:
Infrared Physics and Technology
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
?? INFRARED PHOTOLUMINESCENCEBISMUTH COMPOUNDSLIQUID PHASE EPITAXY CRYSTALLITES CHARACTERIZATION SOLUBILITYPHYSICSELECTRONIC, OPTICAL AND MAGNETIC MATERIALSATOMIC AND MOLECULAR PHYSICS, AND OPTICSCONDENSED MATTER PHYSICSQC PHYSICS ??
ID Code:
56507
Deposited By:
Deposited On:
01 Aug 2012 10:37
Refereed?:
Yes
Published?:
Published
Last Modified:
17 Sep 2023 01:08