Marshall, Andrew R. J. and Ker, Pin Jern and Krysa, Andrey and David, John P. R. and Tan, Chee Hing (2011) High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit. Optics Express, 19 (23). pp. 23341-23349. ISSN 1094-4087
Abstract
High bandwidth, uncooled, Indium Arsenide (InAs) electron avalanche photodiodes (e-APDs) with unique and highly desirable characteristics are reported. The e-APDs exhibit a 3dB bandwidth of 3.5 GHz which, unlike that of conventional APDs, is shown not to reduce with increasing avalanche gain. Hence these InAs e-APDs demonstrate a characteristic of theoretically ideal electron only APDs, the absence of a gain-bandwidth product limit. This is important because gain-bandwidth products restrict the maximum exploitable gain in all conventional high bandwidth APDs. Non-limiting gain-bandwidth products up to 580 GHz have been measured on these first high bandwidth e-APDs. (C) 2011 Optical Society of America