Optical detection of charge redistribution in a delta modulation-doped GaAs-AlxGa1-xAs heterojunction

Kerridge, Gregory C and Greally, Michael G and Hayne, M and Usher, Alan and Plaut, Annette S and Brum, Jose A and Holland, Martin C and Stanley, Colin R (1999) Optical detection of charge redistribution in a delta modulation-doped GaAs-AlxGa1-xAs heterojunction. Solid State Communications, 109 (4). pp. 267-271. ISSN 0038-1098

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Abstract

We have investigated magnetically-induced charge redistribution within a delta modulation-doped GaAs-AlxGa1-xAs heterojunction structure by studying the photoluminescence due to electrons from the two-dimensional(2D) electron system recombining with photoexcited holes. At well defined values of magnetic field, charge transfer occurs between this 2D electron system and the V-shaped potential well formed in the AlxGa1-xAs by Si delta modulation-doping. This redistribution of charge is observed as discontinuities in the photoluminescence energies. From these measurements we have derived the characteristic transfer time for electrons to move between these two wells.

Item Type: Journal Article
Journal or Publication Title: Solid State Communications
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 50376
Deposited By: ep_importer_pure
Deposited On: 15 Oct 2011 15:41
Refereed?: Yes
Published?: Published
Last Modified: 01 Jan 2020 07:39
URI: https://eprints.lancs.ac.uk/id/eprint/50376

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