Optical detection of charge redistribution in a delta modulation-doped GaAs-AlxGa1-xAs heterojunction

Kerridge, Gregory C and Greally, Michael G and Hayne, M and Usher, Alan and Plaut, Annette S and Brum, Jose A and Holland, Martin C and Stanley, Colin R (1999) Optical detection of charge redistribution in a delta modulation-doped GaAs-AlxGa1-xAs heterojunction. Solid State Communications, 109 (4). pp. 267-271. ISSN 0038-1098

Abstract

We have investigated magnetically-induced charge redistribution within a delta modulation-doped GaAs-AlxGa1-xAs heterojunction structure by studying the photoluminescence due to electrons from the two-dimensional(2D) electron system recombining with photoexcited holes. At well defined values of magnetic field, charge transfer occurs between this 2D electron system and the V-shaped potential well formed in the AlxGa1-xAs by Si delta modulation-doping. This redistribution of charge is observed as discontinuities in the photoluminescence energies. From these measurements we have derived the characteristic transfer time for electrons to move between these two wells.