Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings

Kamarudin, M. Ahmad and Hayne, M. and Young, R. J. and Zhuang, Q. D. and Ben, T. and Molina, S. I. (2011) Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings. Physical review B, 83 (11). ISSN 1550-235X

[img]
Preview
PDF
Ahmad_Kamarudin_PRB_83_115311_2011_.pdf - Published Version

Download (551kB)

Abstract

Type-II self-assembled GaSb/GaAs nanostructures have been grown by molecular-beam epitaxy and studied by atomic-force microscopy, transmission electron microscopy, and power-dependent magnetophotoluminescence. Nanostructures on the sample surface are found to be entirely dotlike, while capped nanostructures are predominantly ringlike. Moreover, an in situ anneal process applied after thinly capping the dots is shown to enhance the severity of the rings and relax the strain in the matrix in the proximity of the GaSb, resulting in a change to the spatial configuration of the exciton complexes and their optical properties.

Item Type:
Journal Article
Journal or Publication Title:
Physical review B
Additional Information:
©2011 American Physical Society
Subjects:
ID Code:
49402
Deposited By:
Deposited On:
23 Aug 2011 15:54
Refereed?:
Yes
Published?:
Published
Last Modified:
04 Dec 2020 01:03