Smirnov, V. M. and Batty, P. J. and Jones, Robert and Krier, A. and Vasil'ev, V. I. and Gagis, G. S. and Kuchinskii, V. I. (2007) GaInAsPSb/GaSb heterostructures for mid-infrared light emitting diodes. physica status solidi (a), 204 (4). pp. 1047-1050. ISSN 0031-8965
Full text not available from this repository.Abstract
GaInAsPSb is a new narrow gap semiconductor material which is suitable for the fabrication of semiconductor light sources for the mid-infrared spectral range. Photoluminescence emission spectra from GaInAsPSb grown by LPE and lattice-matched onto GaSb substrates were investigated. Homojunction p-i-n light-emitting diodes in this pentenary alloy were fabricated and electroluminescence peaking near 4.0 mu m at room temperature was observed. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.