Midinfrared GaInSb/AlGaInSb quantum well laser diodes grown on GaAs. .

Nash, G. R. and Smith, S. J. and Coomber, S. D. and Przeslak, S. and Andreev, A. and Carrington, P. and Yin, M. and Krier, A. and Buckle, L. and Emeny, M. T. and Ashley, T. (2007) Midinfrared GaInSb/AlGaInSb quantum well laser diodes grown on GaAs. . Applied Physics Letters, 91 (13). p. 131118. ISSN 1077-3118

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Abstract

The realization of midinfrared GaInSb/AlGaInSb type I quantum well diode lasers grown on GaAs is reported. Lasing was observed up to 95 K, at an emission wavelength of ~3.5 µm, threshold current density of 115 A/cm2, and with a characteristic temperature T0~51 K.

Item Type: Journal Article
Journal or Publication Title: Applied Physics Letters
Additional Information: Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 91 (13), 2007 and may be found at http://link.aip.org/link/?APPLAB/91/131118/1
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 4415
Deposited By: Dr Susan E. Krier
Deposited On: 12 Mar 2008 14:03
Refereed?: Yes
Published?: Published
Last Modified: 06 Aug 2019 00:53
URI: https://eprints.lancs.ac.uk/id/eprint/4415

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