Strain enhancement during annealing of GaAsN alloys.

Zhuang, Q. D. and Krier, A. and Stanley, C. R. (2007) Strain enhancement during annealing of GaAsN alloys. Journal of Applied Physics, 101 (10). p. 103536. ISSN 1089-7550

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Abstract

We have investigated the effect of rapid thermal annealing (RTA) on the optical and structural properties of GaAsN alloys using photoluminescence (PL) and double-crystal x-ray diffraction. We observe a significant anomalous strain enhancement during RTA and a blueshift of the PL peak energy accompanied by a reduction in the emission linewidth. The PL features are attributed to an improvement in the homogeneity of the alloy, and the strain enhancement reflects a change in N-related complexes during annealing. Based on a defect model, an interstitial nitrogen concentration of 1.8×1019 cm−3 is deduced prior to annealing.

Item Type: Journal Article
Journal or Publication Title: Journal of Applied Physics
Additional Information: Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 101 (10), 2007 and may be found at http://link.aip.org/link/?JAPIAU/101/103536/1
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 4361
Deposited By: Dr Susan E. Krier
Deposited On: 12 Mar 2008 14:45
Refereed?: Yes
Published?: Published
Last Modified: 17 Aug 2019 00:42
URI: https://eprints.lancs.ac.uk/id/eprint/4361

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