Zhuang, Q. D. and Krier, A. and Stanley, C. R. (2007) Strain enhancement during annealing of GaAsN alloys. Journal of Applied Physics, 101 (10). p. 103536. ISSN 1089-7550
Abstract
We have investigated the effect of rapid thermal annealing (RTA) on the optical and structural properties of GaAsN alloys using photoluminescence (PL) and double-crystal x-ray diffraction. We observe a significant anomalous strain enhancement during RTA and a blueshift of the PL peak energy accompanied by a reduction in the emission linewidth. The PL features are attributed to an improvement in the homogeneity of the alloy, and the strain enhancement reflects a change in N-related complexes during annealing. Based on a defect model, an interstitial nitrogen concentration of 1.8×1019 cm−3 is deduced prior to annealing.