Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes.

Cook, N. B. and Krier, A. (2009) Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes. Applied Physics Letters, 95 (2). 021110. ISSN 1077-3118

Abstract

InAs-GaInAsSbP-InAsSbP double heterojunction light-emitting diodes were fabricated which exhibit electroluminescence near 3.7 mu m at room temperature. Radiative recombination from band-tail states associated with alloy disorder and localized potential fluctuations was observed, as well as emission from states localized at the InAs-pentanary heterointerface.