Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes.

Cook, N. B. and Krier, A. (2009) Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes. Applied Physics Letters, 95 (2). 021110. ISSN 1077-3118

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Abstract

InAs-GaInAsSbP-InAsSbP double heterojunction light-emitting diodes were fabricated which exhibit electroluminescence near 3.7 mu m at room temperature. Radiative recombination from band-tail states associated with alloy disorder and localized potential fluctuations was observed, as well as emission from states localized at the InAs-pentanary heterointerface.

Item Type:
Journal Article
Journal or Publication Title:
Applied Physics Letters
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
27075
Deposited By:
Deposited On:
29 Sep 2009 08:29
Refereed?:
Yes
Published?:
Published
Last Modified:
01 Jan 2020 06:43