Gandan, Shumithira and Musial, Anna and Rudno-Rudzinsk, Wojciech and Mikulicz, Marek and Montesdeoca Cardenes, Denise and Schmidt, Michael and Morales, Juan and Marshall, Andrew and Krier, Anthony and Carrington, Peter and Sek, Grzegorz (2025) Photoluminescence Properties of Type-II GaSb/GaAs Quantum Rings. Advanced Photonics Research. ISSN 2699-9293
Full text not available from this repository.Abstract
Type-II quantum rings (QRs) exhibit unique physics with great potential for future technologies. In this work, the magneto-optical properties and carrier dynamics of single- and ten-layer stacked GaSb/GaAs QR ensembles fabricated by molecular beam epitaxy are investigated. Activation energies extracted in both single- and ten-layer structures with temperature-dependent photoluminescence (PL), establish recombination dynamics closely linked to the growth method of the nanostructures. Clear optical absorption characteristics are also determined with PL-excitation experiments. In addition, transient temperature-dependent PL reveals distinct recombination pathways through nontrivial carrier decay behavior. With increasing excitation power density, a strong blue shift in peak position energies is observed due to evolving carrier kinetics across low and high excitation regimes. Finally, optical Aharonov–Bohm oscillations are demonstrated for the first time in type-II QRs. The data presented here are expected to advance the optimization of growth and physical properties of GaSb/GaAs QRs.