pBn type short-wavelength infrared photodetector with an ultralow dark current and extended wavelength based on a strained InGaAs/GaAsSb superlattice

Cao, Peng and Bentley, Matthew and You, Minghui and Wei, Jiaqi and Peng, Hongling and Wang, Tiancai and song, chunxu and Zhuang, Qiandong and Zheng, Wanhua (2024) pBn type short-wavelength infrared photodetector with an ultralow dark current and extended wavelength based on a strained InGaAs/GaAsSb superlattice. Optics Letters, 49 (23). pp. 6769-6772. ISSN 0146-9592

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Abstract

An InGaAs/GaAsSb type II superlattice (T2SL) absorber is a promising alternative material for a short-wavelength infrared (SWIR) photodetector due to the largely tunable bandgap by adjusting the thickness and material composition of InGaAs and GaAsSb in each T2SL period. We demonstrate a pBn type SWIR photodetector consisting of a strained InGaAs/GaAsSb T2SL absorber and AlGaAsSb barrier. The device presents an ultralow dark current density of 1.81 × 10−4 A/cm2 and a peak responsivity of 0.38 A/W under a reverse bias of −1 V at 300 K. The detector shows a peak detectivity of 1.62 × 1011 cm·Hz1/2/W and 4.63 × 1010 cm·Hz1/2/W under a reverse bias of −1 V at 260 K and 300 K, respectively. Moreover, our photodetector demonstrates an extended 100% cutoff wavelength response up to 2.2 μm.