Au/Ni/Au as a contact for p-type GaAs

Jones, S O and Bancroft, E and Jarvis, S P and Hayne, M (2024) Au/Ni/Au as a contact for p-type GaAs. Semiconductor Science and Technology, 39 (12): 125011. ISSN 0268-1242

Abstract

An easy to fabricate ohmic-contact to moderately-doped p-type GaAs has been achieved. The tri-layer Au/Ni/Au contact is deposited by thermal evaporation, followed by rapid thermal annealing in nitrogen atmosphere. A series of annealing times and temperatures are explored to determine the influence of annealing conditions on the low-resistance ohmic contacts. The resulting contacts show more than three orders of magnitude reduction in contact resistance compared to alternative Ti/Au depositions.