Simulations of the Temperature Dependence of the Charge Transfer Inefficiency in a High-Speed CCD.

Sopczak, Andre and Bekhouche, Khaled and Bowdery, Chris and Damerell, Chris and Davies, Gavin and Dehimi, Lakhdar and Greenshaw, Tim and Koziel, Michal and Stefanov, Konstantin and Walder, James and Woolliscroft, Tim and Worm, Steve (2007) Simulations of the Temperature Dependence of the Charge Transfer Inefficiency in a High-Speed CCD. IEEE Transactions on Nuclear Science, 54 (4). pp. 1429-1434. ISSN 0018-9499

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Abstract

Results of detailed simulations of the charge transfer inefficiency of a prototype serial readout CCD chip are reported. The effect of radiation damage on the chip operating in a particle detector at high frequency at a future accelerator is studied, specifically the creation of two electron trap levels, 0.17 eV and 0.44 eV below the bottom of the conduction band. Good agreement is found between simulations using the ISE-TCAD DESSIS program and an analytical model for the former level but not for the latter. Optimum operation is predicted to be at about 250 K where the effects of the traps is minimal; this being approximately independent of readout frequency in the range 7-50 MHz. This work has been carried out within the Linear Collider Flavour Identification (LCFI) collaboration in the context of the International Linear Collider (ILC) project.

Item Type:
Journal Article
Journal or Publication Title:
IEEE Transactions on Nuclear Science
Additional Information:
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Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/2100/2104
Subjects:
?? nuclear energy and engineeringelectrical and electronic engineeringnuclear and high energy physicsqc physics ??
ID Code:
18650
Deposited By:
Deposited On:
30 Oct 2008 11:14
Refereed?:
Yes
Published?:
Published
Last Modified:
15 Jul 2024 09:36