Disorder effects on the optical properties and luminescence decay time of p-In0.5Ga0.5P

Golubev, G. P. and Kaufman, I. Kh and Luchinsky, D. G. and Zhukov, E. A. (1994) Disorder effects on the optical properties and luminescence decay time of p-In0.5Ga0.5P. In: Proceedings of the 5th European Quantum Electronics Conference, 1994-08-281994-09-02.

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Abstract

The results of the experimental investigation of disorder effects of near-band-gap reflection and photoluminescence (PL) spectra of p-GaInP are reported in this paper. For the first time for this semiconductor, disorder-induced increase of the surface recombination velocity was determined by means of direct PL decay time measurements.

Item Type: Contribution to Conference (Paper)
Journal or Publication Title: Proceedings of the 5th European Quantum Electronics Conference
Departments: Faculty of Science and Technology > Physics
ID Code: 133646
Deposited By: ep_importer_pure
Deposited On: 20 May 2019 08:25
Refereed?: Yes
Published?: Published
Last Modified: 01 Jan 2020 10:38
URI: https://eprints.lancs.ac.uk/id/eprint/133646

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