Disorder effects on the optical properties and luminescence decay time of p-In0.5Ga0.5P

Golubev, G. P. and Kaufman, I. Kh and Luchinsky, D. G. and Zhukov, E. A. (1994) Disorder effects on the optical properties and luminescence decay time of p-In0.5Ga0.5P. In: Proceedings of the 5th European Quantum Electronics Conference, 1994-08-281994-09-02.

Abstract

The results of the experimental investigation of disorder effects of near-band-gap reflection and photoluminescence (PL) spectra of p-GaInP are reported in this paper. For the first time for this semiconductor, disorder-induced increase of the surface recombination velocity was determined by means of direct PL decay time measurements.