Antimony based mid-infrared semiconductor materials and devices monolithically grown on silicon substrates

Carrington, P. J. and Delli, E. and Hodgson, P. D. and Repiso, E. and Craig, A. and Marshall, A. and Krier, A. (2017) Antimony based mid-infrared semiconductor materials and devices monolithically grown on silicon substrates. In: 30th Annual Conference of the IEEE Photonics Society, IPC 2017 :. Institute of Electrical and Electronics Engineers Inc., USA, pp. 307-308. ISBN 9781509065783

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III-V semiconductor heterostructures grown on GaSb and InAs substrates are widely used to produce high performance optoelectronic devices operating in the technologically important mid-infrared spectral range. However, these substrates are expensive, only available in small sizes and have low thermal conductivity. Integration of III-Vs onto silicon substrates offers the opportunity to overcome these shortcomings and opens the possibility of new applications in lab-on-chip MIR photonic integrated circuits. However, the unusual III-V/Si interface and large lattice mismatch presents challenges to epitaxial growth. Here, we report on novel techniques employed to grow high quality Sb-based optoelectronic devices on silicon using molecular beam epitaxy.

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?? gasbmid-infraredmolecular beam epitaxyatomic and molecular physics, and opticscomputer networks and communicationsinstrumentation ??
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22 Jun 2019 00:54
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16 Jul 2024 04:28