Carrington, P. J. and Delli, E. and Hodgson, P. D. and Repiso, E. and Craig, A. and Marshall, A. and Krier, A. (2017) Antimony based mid-infrared semiconductor materials and devices monolithically grown on silicon substrates. In: 30th Annual Conference of the IEEE Photonics Society, IPC 2017. Institute of Electrical and Electronics Engineers Inc., USA, pp. 307-308. ISBN 9781509065783
Full text not available from this repository.Abstract
III-V semiconductor heterostructures grown on GaSb and InAs substrates are widely used to produce high performance optoelectronic devices operating in the technologically important mid-infrared spectral range. However, these substrates are expensive, only available in small sizes and have low thermal conductivity. Integration of III-Vs onto silicon substrates offers the opportunity to overcome these shortcomings and opens the possibility of new applications in lab-on-chip MIR photonic integrated circuits. However, the unusual III-V/Si interface and large lattice mismatch presents challenges to epitaxial growth. Here, we report on novel techniques employed to grow high quality Sb-based optoelectronic devices on silicon using molecular beam epitaxy.