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Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy

Das, S. K. and Das, T. D. and Dhar, S. and de la Mare, M. and Krier, A. (2012) Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy. Infrared physics & technology, 55 (1). pp. 156-160. ISSN 1350-4495

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Abstract

We report the first observation of photoluminescence (PL) from the dilute bismide alloy GaSbBi. Epitaxial layers are grown by liquid phase epitaxy technique onto GaSb (1 00) substrates and PL is obtained in the near infrared spectral range (lambda similar to 1.6 mu m). Incorporation of 0.2, 0.3 and 0.4 at% Bi to the layer results in a decrease of band gap energy up to 40 meV as well as an increase of luminescence from the sample. Structural analysis confirms the successful incorporation of Bi consistent with an increase in lattice parameter. Raman spectroscopy measurements indicate vibrational modes due to GaBi as well as to free Bi atoms residing at interstitial spaces. (C) 2011 Elsevier B.V. All rights reserved.

Item Type: Article
Journal or Publication Title: Infrared physics & technology
Uncontrolled Keywords: Infrared photoluminescence ; Bismuth compounds ; Liquid phase epitaxy ; Crystallites ; Characterization ; Solubility
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 56507
Deposited By: ep_importer_pure
Deposited On: 01 Aug 2012 11:37
Refereed?: Yes
Published?: Published
Last Modified: 01 Oct 2013 15:30
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/56507

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