Das, S. K. and Das, T. D. and Dhar, S. and de la Mare, M. and Krier, A. (2012) Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy. Infrared physics & technology, 55 (1). pp. 156-160. ISSN 1350-4495Full text not available from this repository.
We report the first observation of photoluminescence (PL) from the dilute bismide alloy GaSbBi. Epitaxial layers are grown by liquid phase epitaxy technique onto GaSb (1 00) substrates and PL is obtained in the near infrared spectral range (lambda similar to 1.6 mu m). Incorporation of 0.2, 0.3 and 0.4 at% Bi to the layer results in a decrease of band gap energy up to 40 meV as well as an increase of luminescence from the sample. Structural analysis confirms the successful incorporation of Bi consistent with an increase in lattice parameter. Raman spectroscopy measurements indicate vibrational modes due to GaBi as well as to free Bi atoms residing at interstitial spaces. (C) 2011 Elsevier B.V. All rights reserved.
|Journal or Publication Title:||Infrared physics & technology|
|Uncontrolled Keywords:||Infrared photoluminescence ; Bismuth compounds ; Liquid phase epitaxy ; Crystallites ; Characterization ; Solubility|
|Subjects:||Q Science > QC Physics|
|Departments:||Faculty of Science and Technology > Physics|
|Deposited On:||01 Aug 2012 11:37|
|Last Modified:||01 Oct 2013 15:30|
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