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The influence of melt purification and structure defects on mid-infrared light emitting diodes. .

Krier, A. and Sherstnev, V. V. (2003) The influence of melt purification and structure defects on mid-infrared light emitting diodes. . Journal of Physics D-Applied Physics, 36 (13). pp. 1484-1488. ISSN 0022-3727

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Abstract

Mid-infrared light emitting diodes which exhibit more than 7 mW (pulsed) and 0.35 mW dc output power at 3.3 mum and at room temperature have been fabricated by liquid phase epitaxy using Pb as a neutral solvent. Using Pb solution an increase in pulsed output power of between two and three times was obtained compared with InAs light emitting diodes (LEDs) made using rare-earth gettering. The performance improvements were attributed to a reduction in residual carrier concentration arising from the removal of un-intentional donors and structure defects in the InAs active region material. These LEDs are well matched to the CH4 absorption spectrum and potentially could form the basis of a practical infrared CH4 gas sensor.

Item Type: Article
Journal or Publication Title: Journal of Physics D-Applied Physics
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 4446
Deposited By: Dr Susan E. Krier
Deposited On: 14 Mar 2008 14:38
Refereed?: Yes
Published?: Published
Last Modified: 26 Jul 2012 18:11
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/4446

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