Krier, A. and Sherstnev, V. V. (2003) The influence of melt purification and structure defects on mid-infrared light emitting diodes. . Journal of Physics D: Applied Physics, 36 (13). pp. 1484-1488. ISSN 0022-3727Full text not available from this repository.
Mid-infrared light emitting diodes which exhibit more than 7 mW (pulsed) and 0.35 mW dc output power at 3.3 mum and at room temperature have been fabricated by liquid phase epitaxy using Pb as a neutral solvent. Using Pb solution an increase in pulsed output power of between two and three times was obtained compared with InAs light emitting diodes (LEDs) made using rare-earth gettering. The performance improvements were attributed to a reduction in residual carrier concentration arising from the removal of un-intentional donors and structure defects in the InAs active region material. These LEDs are well matched to the CH4 absorption spectrum and potentially could form the basis of a practical infrared CH4 gas sensor.
|Journal or Publication Title:||Journal of Physics D: Applied Physics|
|Subjects:||Q Science > QC Physics|
|Departments:||Faculty of Science and Technology > Physics|
|Deposited By:||Dr Susan E. Krier|
|Deposited On:||14 Mar 2008 14:38|
|Last Modified:||04 Nov 2015 02:34|
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