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Reduced free carrier absorption loss in midinfrared double heterostructure diode lasers grown by liquid phase epitaxy. .

Yin, M. and Krier, A. and Jones, Robert and Carrington, Peter (2007) Reduced free carrier absorption loss in midinfrared double heterostructure diode lasers grown by liquid phase epitaxy. . Applied Physics Letters, 91 (10). ISSN 1077-3118

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    Abstract

    An improved InAsSb/InAsSbP double heterojunction ridge laser was designed and grown by liquid phase epitaxy. The cladding layer absorption loss was minimized by the introduction of two undoped quaternary layers on either side of the active region to form a five layer epitaxial structure. The inserted layers also helped alleviate interdiffusion of unwanted dopants into the active region and reduced current leakage in the device. The resulting diode lasers operate readily in pulsed mode near 3.5 µm at elevated temperatures and with a threshold current density as low as 118 A cm−2 at 85 K. Compared to the conventional three-layer double heterostructure laser, the modified structure with reduced optical loss increased the maximum lasing temperature by 95–210 K.

    Item Type: Article
    Journal or Publication Title: Applied Physics Letters
    Additional Information: Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 91 (10), 2007 and may be found at http://link.aip.org/link/?APPLAB/91/101104/1
    Subjects: Q Science > QC Physics
    Departments: Faculty of Science and Technology > Physics
    ID Code: 4418
    Deposited By: Dr Susan E. Krier
    Deposited On: 12 Mar 2008 14:39
    Refereed?: Yes
    Published?: Published
    Last Modified: 09 Apr 2014 22:07
    Identification Number:
    URI: http://eprints.lancs.ac.uk/id/eprint/4418

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