Smirnov, V. M. and Batty, P. J. and Jones, Robert and Krier, A. and Vasil'ev, V. I. and Gagis, G. S. and Kuchinskii, V. I. (2007) GaInAsPSb/GaSb heterostructures for mid-infrared light emitting diodes. PHYSICA STATUS SOLIDI A : APPLICATIONS AND MATERIALS SCIENCE, 204 (4). pp. 1047-1050. ISSN 0031-8965
Full text not available from this repository.Abstract
GaInAsPSb is a new narrow gap semiconductor material which is suitable for the fabrication of semiconductor light sources for the mid-infrared spectral range. Photoluminescence emission spectra from GaInAsPSb grown by LPE and lattice-matched onto GaSb substrates were investigated. Homojunction p-i-n light-emitting diodes in this pentenary alloy were fabricated and electroluminescence peaking near 4.0 mu m at room temperature was observed. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
| Item Type: | Article |
|---|---|
| Journal or Publication Title: | PHYSICA STATUS SOLIDI A : APPLICATIONS AND MATERIALS SCIENCE |
| Subjects: | Q Science > QC Physics |
| Departments: | Faculty of Science and Technology > Physics |
| ID Code: | 4417 |
| Deposited By: | Dr Susan E. Krier |
| Deposited On: | 12 Mar 2008 14:25 |
| Refereed?: | Yes |
| Published?: | Published |
| Last Modified: | 24 May 2013 14:13 |
| Identification Number: | |
| URI: | http://eprints.lancs.ac.uk/id/eprint/4417 |
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