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GaInAsPSb/GaSb heterostructures for mid-infrared light emitting diodes

Smirnov, V. M. and Batty, P. J. and Jones, Robert and Krier, A. and Vasil'ev, V. I. and Gagis, G. S. and Kuchinskii, V. I. (2007) GaInAsPSb/GaSb heterostructures for mid-infrared light emitting diodes. PHYSICA STATUS SOLIDI A : APPLICATIONS AND MATERIALS SCIENCE, 204 (4). pp. 1047-1050. ISSN 0031-8965

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Abstract

GaInAsPSb is a new narrow gap semiconductor material which is suitable for the fabrication of semiconductor light sources for the mid-infrared spectral range. Photoluminescence emission spectra from GaInAsPSb grown by LPE and lattice-matched onto GaSb substrates were investigated. Homojunction p-i-n light-emitting diodes in this pentenary alloy were fabricated and electroluminescence peaking near 4.0 mu m at room temperature was observed. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Item Type: Article
Journal or Publication Title: PHYSICA STATUS SOLIDI A : APPLICATIONS AND MATERIALS SCIENCE
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 4417
Deposited By: Dr Susan E. Krier
Deposited On: 12 Mar 2008 14:25
Refereed?: Yes
Published?: Published
Last Modified: 09 Apr 2014 22:07
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/4417

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