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Strain enhancement during annealing of GaAsN alloys.

Zhuang, Q. D. and Krier, A. and Stanley, C. R. (2007) Strain enhancement during annealing of GaAsN alloys. Journal of Applied Physics, 101 (10). p. 103536. ISSN 1089-7550

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    We have investigated the effect of rapid thermal annealing (RTA) on the optical and structural properties of GaAsN alloys using photoluminescence (PL) and double-crystal x-ray diffraction. We observe a significant anomalous strain enhancement during RTA and a blueshift of the PL peak energy accompanied by a reduction in the emission linewidth. The PL features are attributed to an improvement in the homogeneity of the alloy, and the strain enhancement reflects a change in N-related complexes during annealing. Based on a defect model, an interstitial nitrogen concentration of 1.8×1019 cm−3 is deduced prior to annealing.

    Item Type: Article
    Journal or Publication Title: Journal of Applied Physics
    Additional Information: Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 101 (10), 2007 and may be found at
    Subjects: Q Science > QC Physics
    Departments: Faculty of Science and Technology > Physics
    ID Code: 4361
    Deposited By: Dr Susan E. Krier
    Deposited On: 12 Mar 2008 14:45
    Refereed?: Yes
    Published?: Published
    Last Modified: 04 Nov 2015 02:32
    Identification Number:

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