Items where Author is "Zheng, Wanhua"

Journal Article

Cao, Peng and Wei, JiaQi and Bentley, Matthew and Davison, Nicholas and Hu, Yidan and You, Minghui and Peng, Hongling and Wang, Tiancai and Zhuang, Qiandong and Zheng, Wanhua (2025) nBn mid-wavelength infrared photodetectors based on bulk InGaAsSb absorbers. Optical Materials Express, 15 (4). pp. 717-723. ISSN 2159-3930

Cao, Peng and Bentley, Matthew and You, Minghui and Wei, Jiaqi and Peng, Hongling and Wang, Tiancai and song, chunxu and Zhuang, Qiandong and Zheng, Wanhua (2024) pBn type short-wavelength infrared photodetector with an ultralow dark current and extended wavelength based on a strained InGaAs/GaAsSb superlattice. Optics Letters, 49 (23). pp. 6769-6772. ISSN 0146-9592

Wang, Tiancai and Peng, Hongling and Cao, Peng and Zhuang, Qiandong and Deng, Jie and Chen, Jian and Zheng, Wanhua (2024) Low-Energy Ion Implantation and Deep-Mesa Si-Avalanche Photodiodes with Improved Fabrication Process. Sensors, 24 (2): 640. ISSN 1424-8220

Cao, Peng and Peng, Hongling and Wang, Tiancai and Srivastava, Vibha and Kesaria, Manoj and You, Minghui and Zhuang, Qiandong and Zheng, Wanhua (2023) Surface passivation of random alloy AlGaAsSb avalanche photodiode. Electronics Letters, 59 (18): e12956. ISSN 0013-5194

Cao, Peng and Wang, Tiancai and Peng, Hongling and Zhuang, Qiandong and Zheng, Wanhua (2023) Growth and Dark Current Analysis of GaSb- and InP-Based Metamorphic In 0.8 Ga 0.2 As Photodetectors. Materials, 16 (13): 4538. ISSN 1996-1944

Cao, Peng and Wang, Tiancai and Peng, Hongling and Zhuang, Qiandong and Zheng, Wanhua (2023) Growth and Dark Current Analysis of GaSb- and InP-Based Metamorphic In0.8Ga0.2As Photodetectors. Materials, 16 (13): 4538. ISSN 1996-1944