Items where Author is "Grace, I.M."

Grace, I.M. and Olsen, G. and Hurtado-Gallego, J. and Rincón-García, L. and Rubio-Bollinger, G. and Bryce, M.R. and Agraït, N. and Lambert, C.J. (2020) Connectivity dependent thermopower of bridged biphenyl molecules in single-molecule junctions. Nanoscale, 12 (27). pp. 14682-14688. ISSN 2040-3372

Audi, H. and Viero, Y. and Alwhaibi, N. and Chen, Z. and Iazykov, M. and Heynderickx, A. and Xiao, F. and Guérin, D. and Krzeminski, C. and Grace, I.M. and Lambert, C.J. and Siri, O. and Vuillaume, D. and Lenfant, S. and Klein, H. (2020) Electrical molecular switch addressed by chemical stimuli. Nanoscale, 12 (18). pp. 10127-10139. ISSN 2040-3372

Jia, C. and Grace, I.M. and Wang, P. and Almeshal, A. and Huang, Z. and Wang, Y. and Chen, P. and Wang, L. and Zhou, J. and Feng, Z. and Zhao, Z. and Huang, Y. and Lambert, C.J. and Duan, X. (2020) Redox Control of Charge Transport in Vertical Ferrocene Molecular Tunnel Junctions. Chem, 6 (5). pp. 1172-1182. ISSN 2451-9308

Naghibi, S. and Ismael, A.K. and Vezzoli, A. and Al-Khaykanee, M.K. and Zheng, X. and Grace, I.M. and Bethell, D. and Higgins, S.J. and Lambert, C.J. and Nichols, R.J. (2019) Synthetic Control of Quantum Interference by Regulating Charge on a Single Atom in Heteroaromatic Molecular Junctions. Journal of Physical Chemistry Letters, 10 (20). pp. 6419-6424. ISSN 1948-7185

Famili, M. and Jia, C. and Liu, X. and Wang, P. and Grace, I.M. and Guo, J. and Liu, Y. and Feng, Z. and Wang, Y. and Zhao, Z. and Decurtins, S. and Häner, R. and Huang, Y. and Liu, S.-X. and Lambert, C.J. and Duan, X. (2019) Self-Assembled Molecular-Electronic Films Controlled by Room Temperature Quantum Interference. Chem, 5 (2). pp. 474-484. ISSN 2451-9308

Jia, C. and Famili, Marjan and Carlotti, M. and Liu, Y. and Wang, P. and Grace, I.M. and Feng, Z. and Wang, Y. and Zhao, Z. and Ding, M. and Xu, X. and Wang, C. and Lee, S.-J. and Huang, Y. and Chiechi, R.C. and Lambert, C.J. and Duan, X. (2018) Quantum interference mediated vertical molecular tunneling transistors. Science Advances, 4 (10): eaat8237. ISSN 2375-2548