Impact ionisation in Al0.9Ga0.1As0.08Sb0.92 for Sb-based avalanche photodiodes

Collins, Xiao and Craig, Adam Patrick and Roblin, T. and Marshall, Andrew Robert Julian (2018) Impact ionisation in Al0.9Ga0.1As0.08Sb0.92 for Sb-based avalanche photodiodes. Applied Physics Letters, 112 (2). ISSN 0003-6951

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Abstract

We report the impact ionisation coefficients of the quaternary alloy Al0.9Ga0.1As0.08Sb0.92 lattice matched to GaSb substrates within the field range of 150 to 550 kV cm-1 using p-i-n and n-i-p diodes of various intrinsic thicknesses. The coefficients were found with an evolutionary fitting algorithm using a non-local recurrence based multiplication model and a variable electric field profile. These coefficients not only indicate that an avalanche photodiode can be designed to be function in the mid-wave infrared, but also can be operated at lower voltages. This is due to the high magnitude of the impact ionisation coefficients at relatively low fields compared to other III-V materials typically used in avalanche multiplication regions.

Item Type:
Journal Article
Journal or Publication Title:
Applied Physics Letters
Additional Information:
Copyright 2018 American Institute of Physics. The following article appeared in Applied Physics Letters, 112, 2018 and may be found at http://dx.doi.org/10.1063/1.5006883 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3101
Subjects:
ID Code:
89431
Deposited By:
Deposited On:
02 Jan 2018 17:02
Refereed?:
Yes
Published?:
Published
Last Modified:
22 Sep 2020 03:37