Impact ionisation in Al0.9Ga0.1As0.08Sb0.92 for Sb-based avalanche photodiodes

Collins, Xiao and Craig, Adam Patrick and Roblin, T. and Marshall, Andrew Robert Julian (2018) Impact ionisation in Al0.9Ga0.1As0.08Sb0.92 for Sb-based avalanche photodiodes. Applied Physics Letters, 112 (2). ISSN 0003-6951

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We report the impact ionisation coefficients of the quaternary alloy Al0.9Ga0.1As0.08Sb0.92 lattice matched to GaSb substrates within the field range of 150 to 550 kV cm-1 using p-i-n and n-i-p diodes of various intrinsic thicknesses. The coefficients were found with an evolutionary fitting algorithm using a non-local recurrence based multiplication model and a variable electric field profile. These coefficients not only indicate that an avalanche photodiode can be designed to be function in the mid-wave infrared, but also can be operated at lower voltages. This is due to the high magnitude of the impact ionisation coefficients at relatively low fields compared to other III-V materials typically used in avalanche multiplication regions.

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Journal Article
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Applied Physics Letters
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Copyright 2018 American Institute of Physics. The following article appeared in Applied Physics Letters, 112, 2018 and may be found at This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
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02 Jan 2018 17:02
Last Modified:
22 Nov 2022 05:19